Sriram Krishnamoorthy

Biography

Sriram Krishnamoorthy received the bachelor’s degree in electrical engineering and physics from the Birla Institute of Technology and Science, Pilani, India, in 2009, and the Ph.D. degree from the Electrical and Computer Engineering Department, The Ohio State University, Columbus, OH, USA, in 2014. Sriram Krishnamoorthy is currently a Mehrabian Career Development Chair Assistant professor in the Materials Department at University of California, Santa Barbara, where his group works at the intersection of materials, electrical engineering, and physics to study and engineer next generation (ultra)wide band gap semiconductors such as Gallium Oxide. His research interests are in the areas of epitaxial growth, electronic transport, design/modeling, micro/nano fabrication, and characterization of electronic/optoelectronic devices for a wide range of applications such as power electronics, high frequency electronics and ultra-violet optoelectronics. He has authored or co-authored more than 90 journal articles and more than 160 conference presentations/ proceedings on several topics covering Gallium Nitride interband tunnel junctions for efficient hole injection in III-nitride optoelectronic devices, molecular beam epitaxy growth of III-nitrides, Gallium (Aluminum) Oxide thin films and heterostructures, metalorganic vapor phase epitaxy of UWBG Gallium (Aluminum) Oxide thin films and heterostructures, and high performance lateral and vertical power diodes and transistors based on Gallium Oxide.